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Bulletin I2066/B
SD303C..C SERIES
FAST RECOVERY DIODES Features
High power FAST recovery diode series 1.0 to 2.0 s recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AA Maximum junction temperature 125C
Hockey Puk Version
350A
Typical Applications
Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications
case style DO-200AA
Major Ratings and Characteristics
Parameters
IF(AV) @ Ths IF(RMS) @ Ths IFSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz VRRM range trr range @ TJ TJ
SD303C..C
350 55 550 25 5770 6040 166 152 400 to 2500 1.0 to 2.0 25 - 40 to 125
Units
A C A C A A KA2s KA2s V s C C
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SD303C..C Series
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 SD303C..S10C 08 10 12 SD303C..S15C 14 16 SD303C..S20C 20 25
V RRM max. repetitive peak and off-state voltage V
400 800 1000 1200 1400 1600 2000 2500
VRSM , maximum nonrepetitive peak voltage V
500 900 1100 1300 1500 1700 2100 2600
I RRM max. TJ = 125C mA
35
12
Forward Conduction
Parameter
I F(AV) Max. average forward current @ Heatsink temperature I F(RMS) Max. RMS current I FSM Max. peak, one-cycle non-repetitive forward current
SD303C..C
350(175) 55(75) 550 5770 6040 4850 5080
Units
A C A
Conditions
180 conduction, half sine wave. Double side (single side) cooled @ 25C heatsink temperature double side cooled t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
A
t = 10ms t = 8.3ms t = 10ms
I2 t
Maximum I2t for fusing
166 152 117 107 KA2s
t = 8.3ms t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1660 1.14 1.63 1.14
KA2s V
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. (I > x IF(AV)), TJ = TJ max. (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max. (I > x IF(AV)), TJ = TJ max.
pk p
V F(TO)1 Low level of threshold voltage V F(TO)2 High level of threshold voltage rf1 rf2 V FM Low level of forward slope resistance High level of forward slope resistance Max. forward voltage
m 0.77 2.26 V
2222222222222
I = 1100A, TJ = 25C, t = 10ms sinusoidal wave
Recovery Characteristics
Code
TJ = 25 oC typical t (s)
rr
Test conditions
I
pk
Max. values @ TJ = 125 C
V
r
di/dt (A/s)
t
rr
Q
rr
I
rr
@ 25% IRRM
Square Pulse (A) (V)
@ 25% IRRM (s) 2.4 (C) 52 90 107 (A) 33 44 46
S10 S15 S20
1.0 1.5 2.0 750 25 -30
2.9 3.2
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SD303C..C Series
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
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SD303C..C Series
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
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SD303C..C Series
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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SD303C..C Series
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
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SD303C..C Series
Thermal and Mechanical Specifications
Parameter
TJ T
stg
SD303C..C
-40 to 125 -40 to 150 0.16
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink F wt Mounting force, 10% Approximate weight Case style
DC operation single side cooled K/W DC operation double side cooled N (Kg) g See Outline Table
0.08 4900 (500) 70 DO-200AA
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction
Single Side Double Side 0.010 0.012 0.016 0.024 0.042 0.011 0.013 0.016 0.024 0.042
Rectangular conduction
Single Side Double Side 0.008 0.013 0.018 0.025 0.042 0.008 0.013 0.018 0.025 0.042
Units
Conditions
23
K/W
TJ = TJ max.
Ordering Information Table
Device Code
SD
1
30
2
3
3
C
4
25 S20
5 6
C
7
1 2 3 4 5 6 7
-
Diode Essential part number 3 = Fast recovery C = Ceramic Puk
Voltage code: Code x 100 = V RRM (see Voltage Ratings table) trr code (see Recovery Characteristics table) C = Puk Case DO-200AA
D-6573333
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SD303C..C Series
Outline Table
3.5(0.14) 0.1(0.004) DIA. NOM.x 1.8 (0.07) DEEP MIN. BOTH ENDS 19(0.75) DIA. MAX. TWO PLACES 0.3 (0.01) MIN. BOTH ENDS
4 2 ( 1 .6 5 ) D IA . M A X .
12
38 (1.50) DIA. MAX.
1 4 .4 (0 .5 7 )
All dimensions in millimeters (inches)
1 3 .7 (0 .54 )
Case Style DO-200AA
2222222222222
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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